Transistor-level signal cutting method and structure

ABSTRACT

A modifiable circuit structure and its method of formation are disclosed. The modifiable circuit structure electrically couples one portion of an interconnect with another portion of the interconnect through vias disposed in a dielectric layer. The combination of the modifiable circuit structure, the interconnect portions, and the vias provide a signal path between transistors in an integrated circuit. In one embodiment the modifiable circuit structure is a polysilicon feature formed over regions of a semiconductor substrate. In an alternative embodiment, the modifiable circuit structure is a diffusion region formed in region the semiconductor substrate.

FIELD OF THE INVENTION

Embodiments of the present invention relate generally to the field ofintegrated circuit testing and more particularly a method and apparatusenabling circuit edits in an integrated circuit.

BACKGROUND OF THE INVENTION

The process of identifying and correcting problems in new integratedcircuit (IC) designs is known as debugging. During debugging, it issometimes necessary to edit (i.e., add, delete or reroute) signal lineconnections within the IC in order to optimize its performance. Afterdebugging, optimized designs can be used to mass produce integratedcircuits.

FIG. 1 shows a schematic illustration of how an IC 100 can be edited.Here, circuit block 102 is coupled to circuit block 104 by way ofinverter 106. If during debugging it is determined that the signal fromcircuit block 102 should not be inverted when received by circuit block106, then IC 100 can be edited by (1) cutting the signal line at point114 to electrically remove inverter 106 from IC 100, and (2) couplingcircuit block 102 to circuit block 104 at points 108 and 110 by way ofjumper 112.

Prior art techniques for cutting signal lines to isolate circuitryinclude removing portions of a first level metal (M1) interconnect usinga focused ion beam (FIB) milling tool. These techniques are discussed inU.S. Pat. No. 6,153,891, entitled “Method and Apparatus Providing ACircuit Edit Structure Through The Back Side of An Integrated Circuit,”filed on Sep. 30, 1997, and assigned to the Assignee hereof. FIG. 2illustrates a cross-sectional view 200 showing one way this can be done.

Shown in FIG. 2 is a cross-sectional view of a portion of an IC 200 thatincludes source/drain region 225 of transistor 226 and source/drainregion 227 of transistor 228 (e.g., the output of the inverter 106 andinput of circuit block 104 in FIG. 1) formed in semiconductor substrate222 and separated by isolation region 224. First level (M1) interconnect231 couples source/drain 225 to source/drain 227 by way of vias 229formed in dielectric 230. Second level (M2) interconnects 233 canconnect to M1 interconnect 231 through vias in some regions (not shown).In other regions, the M1 interconnect 231 is isolated from M2interconnects 233 by way of interlayer dielectric 232. Layer 234, whichcan include any number of other conductors, insulators, etc., canoverlie interlayer dielectric 232.

As shown in FIG. 2, the signal line 231 can be cut by milling a windowopening 235 through the silicon substrate 222. After the window 235 ismilled, portions of the isolation region 224, portions of the dielectric230, and then portions of the first level interconnect 231 exposed bythe window 135 are removed until a discontinuity 214 is created in M1interconnect 231. The discontinuity 214 creates an electrical open(similar to the cut 114 schematically shown in FIG. 1) that electricallyisolates source/drain region 225 from source/drain region 226.

The migration from aluminum to copper interconnects in state-of-the-artsemiconductor processes has made the cutting process described in FIG. 2problematic. More specifically, because copper does not easilyvolatilize, it is difficult to cut using FIB enhanced/assisted chemicaletch tools, lasers, etc. This can result in failure to isolate existingcircuitry (due to incomplete cuts) and copper redeposition that canproduce shorts between adjacent interconnects (not shown). The FIB'senergy can be increased to address this, however this reducesselectivity to the adjacent interlayer dielectric 232 and creates otherproblems. For example, now the loss in selectively in conjunction withthe copper's low volatility can result in electrical shorts 236 betweenM1 interconnects 231 and M2 interconnect 233, as shown in FIG. 2.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates schematic representation of a circuit edit beingpreformed on an integrated circuit.

FIG. 2 illustrates a cross-sectional view of a circuit edit beingperformed on an integrated circuit.

FIG. 3 illustrates schematic representation of a circuit edit beingperformed on an integrated circuit in accordance with an embodiment ofthe present invention.

FIG. 4A illustrates a cross-sectional view of an integrated circuithaving a modifiable circuit structure in accordance with an embodimentof the present invention.

FIG. 4B illustrates a cross-sectional view of a circuit edit beingperformed on the modifiable circuit structure of FIG. 4A.

FIG. 5A illustrates a cross-sectional view of an integrated circuithaving a modifiable circuit structure in accordance with an embodimentof the present invention.

FIG. 5B illustrates a cross-sectional view of a circuit edit beingperformed on the modifiable circuit structure of FIG. 5A.

FIG. 6A illustrates a top-down layout view of the modifiable circuitstructure of FIGS. 4A and 4B.

FIG. 6B illustrates a top-down layout view of the modifiable circuitstructure of FIGS. 5A and 5B.

It will be appreciated that for simplicity and clarity of illustration,elements in the drawings have not necessarily been drawn to scale. Forexample, the dimensions of some of the elements may be exaggeratedrelative to other elements for clarity. Where considered appropriate,reference numerals have been repeated among the drawings to indicatecorresponding or analogous elements.

DETAILED DESCRIPTION

In the following detailed description, a modifiable circuit structure isdisclosed. Reference is made to the accompanying drawings within whichare shown, by way of illustration, specific embodiments by which thepresent invention may be practiced. It is to be understood that otherembodiments may exist and that other changes may be made withoutdeparting from the scope and spirit of the present invention.

The terms on, above, below, and adjacent as used herein refer to theposition of one layer or element relative to other layers or elements.As such, a first element disposed on, above, or below a second elementmay be directly in contact with the second element or it may include oneor more intervening elements. In addition, a first element disposed nextto or adjacent a second element may be directly in contact with thesecond element or it may include one or more intervening elements.

In accordance with one embodiment, a modifiable circuit structure isformed in or on portions of a semiconductor substrate. The position ofthe modifiable circuit structure is typically closer to the bulksemiconductor substrate than a M1 interconnect level and/or it can beformed of a material that is different from that of the M1interconnects. The modifiable circuit structure can function as aconductive bridge between metal interconnect segments and therebyprovides a supplemental medium for signal transmission between adjacentcircuitry. This supplemental medium is more easily volatilized ascompared to prior art copper structures and it can be removed withgreater selectivity to adjacent materials. The modifiable circuitstructure's proximity to the bulk semiconductor substrate, its increasedselectivity, and its ability to be fully volatilized improvesediting/cut success rates, throughput, and it enables the placement of ahigher density of modifiable circuit structures into integrated circuitdesigns.

Shown in FIG. 3 is schematic representation of a circuit edit performedon an integrated circuit 300 in accordance with one embodiment of thepresent invention. Here, during the debug process it was determined thatthe output of circuit block 302, which is coupled to circuit block 304by way of inverter 306, should not be inverted when received by circuitblock 304. So, using one or more of the embodiments herein, IC 300 canbe edited by forming a discontinuity 330 (i.e., an electrical open orcut) in the modifiable circuit structure 314 that decouples the outputof inverter 306 from the input of circuit block 304. Unlike the priorart, which forms the open in a M1 interconnect, embodiments of thepresent invention form the open 330 in a discrete structure 314 separateand/or apart from the M1 interconnect.

To the extent that bonus features 308 (bonus lines and bonus cells)exist in the IC 300, they can be added by depositing conductors 318 and320 at points 310 and 312 respectively to electrically connecting themto the signal line. Similarly, to the extent that it is determined thatbonus features must be removed from the IC 300, modifiable circuitstructures 316 and/or 317 (similar to that of modifiable structure 314)can be cut to remove all or part of the bonus feature from the IC 300.In addition, the modifiable circuit structures described herein can beconnected in series with inputs to a bonus feature designed in to an ICso as to provides a conductive path for at least one of VCC and VSS tohold an input of the bonus feature high or low, as the case may bethereby keeping it out of tri-state mode and preventing it fromimpacting the operation of other IC circuitry. Then later if it isdetermined that the bonus feature should be incorporated into the IC,the modifiable circuit structure can be cut to allow for normaloperation of the bonus feature. For the purpose of this specification,bonus features are uncommitted logic elements and interconnects thatexist in the IC to aid in design verification and to fix bugs but whichare not used unless the need arises.

Turning now to FIG. 4A, a cross-sectional view is shown illustrating anintegrated circuit 400A having a modifiable circuit structure 440 inaccordance with one embodiment of the present invention. Here, themodifiable circuit structure 440 could be representative of themodifiable circuit structure 314 in FIG. 3. As shown in FIG. 4A, themodifiable circuit structure 440 can be formed indirectly onsemiconductor substrate 422. The semiconductor substrate 422 can be amonocrystalline semiconductor substrate, such as a silicon substrate.Or, alternatively, the semiconductor substrate 422 can be a compoundsemiconductor substrate, a silicon-on-insulator substrate or any othersubstrate used in the manufacture of semiconductor devices.

Trench isolation regions 424 or the like are formed on/in thesemiconductor substrate. The trench isolation regions 424 can be used,among other things, to isolate source/drain 425 and 427 from each other.Transistors 426 and 428 overlie source/drain regions 425 and 427,respectively. Transistor 426 is cooperatively coupled to transistor 428by way of source/drain region 425, via 429A, M1 interconnect 431A, via442A, modifiable circuit structure 440, via 442B, M1 interconnect 431B,via 429B and source/drain region 427. Here source/drain region 425 couldcorrespond to the output of inverter 306 (shown in FIG. 3) andsource/drain region 427 can correspond to the input of circuit block 304(shown in FIG. 3).

In accordance with one embodiment, modifiable circuit structure 440 canbe deposited, patterned, and/or etched concurrently with the formationof gates for transistors 426 and 428. In one embodiment, the modifiablecircuit structure 440 is formed from polysilicon. In alternativeembodiments, the modifiable circuit structure can be formed from (1)silicon materials such as epitaxial silicon, amorphous silicon, and/orsilicides; (2) metal-containing materials such as aluminum, (3)refractory metal-containing materials such as titanium, titaniumnitride, tantalum, tantalum nitride, tungsten, tungsten nitride,molybdenum, molybdenum nitride; and (4) noble metal-containing materialor metal material capable of forming conductive metal oxide, such asplatinum, palladium, osmium, ruthenium, iridium oxide, ruthenium oxide,or the like. In addition, combinations of the foregoing materials can beused to form the modifiable circuit structure 440. One of ordinary skillappreciates that for the purposes of functioning as a modifiable circuitstructure (i.e., being able to be cut/milled with a FIB-induced/enhancedchemical etch process) materials that are more easily volatilized may bepreferable over materials that are less easily volatilized.

As shown in FIG. 4A, the modifiable circuit structure 440 can be formedindirectly on the semiconductor substrate 422 (i.e. it can be formedover the isolation region 424), however this is not necessarily arequirement of the present invention. The modifiable circuit structure440 can alternatively be formed directly on the semiconductor substrate422 or on an intervening layer or structure, such as for example a gateoxide layer (not shown) formed on (or over) the semiconductor substrate422.

Overlying transistors 426 and 428 and circuit modifiable structure 440is a dielectric layer 430. M1 interconnects 431A and 431B overlie thedielectric layer 430. M1 interconnects 431 A and B are coupled tosource/drain regions 425 and 427 by way of vias 429A and 429B throughthe dielectric layer 430. In accordance with one embodiment, M1interconnect 431 couples to modifiable circuit structure 440 by way ofvias 442. Unlike conventional methods and structures which simply use acontinuous M1 interconnect as the modifiable structure, embodiments ofthe present invention incorporate a discontinuity 444 in M1 interconnect431 in conjunction with a separate modifiable circuit structure 440 andvias 442 to form the signal route between interconnected circuitelements (here, source/drains 425 and 427).

Overlying M1 interconnects 431 A and B is interlayer dielectric 432.Second level (M2) interconnects 433 can couple with M1 interconnect 431by way of vias (not shown) through interlayer dielectric 432. OverlyingM2 interconnects 433 can be an interlayer dielectric 434. And, overlying(or within) interlayer dielectric 434 is layer 436, which can includeany number of IC elements, such as for example, additionalinterconnects, interlayer dielectrics, vias, passivation, bond pads,etc., used to fabricate an integrated circuit. One of ordinary skillappreciates that for purposes of practicing embodiments herein, the useof elements such as interlayer dielectric 432, M2 interconnects 433,interlayer dielectric 434, and additional circuit elements 436, isoptional.

A process for editing the modifiable circuit structure of FIG. 4A willnow be described with reference to FIG. 4B. In one embodiment, anelectrical open is formed in the signal path between transistors 426 and428 by first forming a window opening through the back side (i.e., thesemiconductor substrate 422 side) of the integrated circuit 400A andthen removing portions of the modifiable circuit structure 440 (and anyintervening material, if present) through the window. FIG. 4B, shows theintegrated circuit 400A after forming an window 450 through bulkportions of the semiconductor substrate 422 and then removing portionsof the modifiable circuit structure 440 thereby forming an electricalopen 330 between transistors 426 and 428. Note that for the purposes ofease and discussion, FIG. 4B, has been inverted as compared to FIG. 4Aand is now designated as IC 400B.

In one embodiment, in order to cut the modifiable circuit structure 440,the IC 400B can first be globally thinned (not shown) by removingportions of substrate 442 prior to forming the window 450. In oneembodiment, the IC 400B is globally thinned to a thickness ofapproximately 200 microns using well known techniques, such as forexample mechanical polishing, mechanical machining, chemical etching orthe like. Global thinning is not necessarily a requirement of thepresent invention. However, it can improve throughput of the editingoperation by reducing the amount of material that must be removed duringthe formation of window 450. In an alternative embodiment, instead ofglobal thinning, the substrate could instead be locally thinned inregions proximate to the modifiable circuit structure.

After the semiconductor substrate 422 is thinned, portions of thesemiconductor substrate 422 proximate the modifiable circuit structure440 (i.e., portions adjacent the modifiable circuit structure 440) areremoved to form the window 450. In one embodiment, portions are removedusing well known milling techniques, such as for example using a FIBmilling tool to perform a FIB induced or FIB assisted chemical etch.

Generally, in the FIB induced chemical etch, gas chemistries are firstintroduced in close proximity to the desired circuit edit area so theycan adsorb onto the backside of the silicon substrate (bulk siliconsubstrate side). The focused ion beam then rasters over regions of thesemiconductor substrate (or other underlying regions exposed during themilling process) where the etching is to occur. The energy provided bythe FIB's primary ions and/or secondary particles (electrons and ionscoming off the substrate surface) provide the energy required to inducea surface chemical reaction and thereby removes the material beingmilled/etched. Selectivity to various layers exposed during the millingprocess can be controlled by introducing specific chemistries that aremore or less reactive with one type of material over another. The FIBassisted chemical etch process is similar to the above process exceptthat instead of just adsorbing on the backside surface of thesemiconductor substrate, the chemistries are capable of spontaneouslyetching the substrate material (or other underlying regions exposedduring the milling process) on its own. Here, the FIB can enhance theremoval rate, directionality (anisotropy), and selectivity of the etch.

In embodiments where the modifiable circuit structure is formed over atrench isolation region, such as here, milling/removal continues untilportions of the trench isolation material 424 are removed and then untilan electrical open 330 is formed in modifiable circuit structure 440.The electrical open 330 shown in FIG. 4B can correspond with thediscontinuity 330 shown in FIG. 3.

Upon forming the electrical open 330, the signal path has been brokenand the source/drains 425 and 427 have been isolated from each other. Itis worth nothing that at this point in the process, windowscorresponding to points 322, 324 and 326, 328 (FIG. 3) can also bemilled and conductive jumpers 318 and 320 (FIG. 3) can be deposited tointegrate the use of bonus features 308 (FIG. 3), if so desired.

FIG. 5A shows an alternative embodiment of the present invention whereinthe modifiable circuit structure 540 is formed as a diffusion region 540in the semiconductor substrate 522. For the purposes of simplicity,unnecessary repetitive discussion of elements 522, 524 525, 526, 527,528, 530, 529, 532, 533, 534, and 536 of FIG. 5A, which are functionallyequivalent to elements 422, 424 425, 426, 427, 428, 429, 430, 432, 433,434, and 536 of FIG. 4A, will be omitted. As shown in FIG. 5A, themodifiable circuit structure 540 is a diffusion region formed betweenisolation regions 524. The diffusion region 540 can be formed as a tapor diode diffusion region and at approximately the same timesource/drain regions 527 and 528 are formed. The diffused modifiablecircuit structure 540 should be doped so that it is highly conductive.Conductivity can additionally be increased by siliciding the diffusedmodifiable circuit structure 540.

As shown in FIG. 5A, M1 interconnects 531 are coupled to source/drainregions 525 and 527 by way of vias 529 through the dielectric layer 430.In accordance with one embodiment, M1 interconnect 531 couples tomodifiable circuit structure 540 by way of vias 542. Unlike conventionalmethods and structures which simply use a continuous M1 interconnect asthe modifiable structure, embodiments of the present inventionincorporate a discontinuity 544 in M1 interconnect 531 in conjunctionwith the separate diffused modifiable circuit structure 540 and vias 542to form the signal route between interconnected circuit elements (i.e.source/drains 225 and 427).

A process for editing the modifiable circuit structure of FIG. 5A willnow be discussed with reference to FIG. 5B. In one embodiment, anelectrical open 330 is formed in the signal path between transistors 526and 528 by first (1) forming an opening through the back side (i.e., thesemiconductor substrate 522 side) of the integrated circuit 500B and (2)then removing portions of the diffused modifiable circuit structure 540(and any intervening material, if present) through the opening 550. FIG.5B, shows the integrated circuit 500B after forming window 550 throughbulk portions of the semiconductor substrate 522 and removing portionsof the modifiable circuit structure 540, thereby forming an electricalopen 330 between transistors 526 and 528. Note that the IC 500B of FIG.5B, has been inverted as compared to the IC 500A of FIG. 5A.

Similar to the embodiment discussed with respect to FIG. 4B, thisembodiment contemplates global thinning of portions of semiconductorsubstrate 522 prior to forming the window opening 550. So, in oneembodiment, the IC 500B can be globally thinned to a thickness ofapproximately 200 microns using well known techniques, such as forexample mechanical polishing, mechanical machining, chemical etching orthe like prior to forming the window opening 550. As stated previously,global (or local) thinning is not necessarily a requirement of thepresent invention. However, it can improve throughput of the editingoperation by reducing the amount of semiconductor material that must beremoved in order to form window 550.

After the substrate 522 is thinned, portions of the semiconductorsubstrate 522 proximate the modifiable circuit structure 540 are removedto form the window 550. In one embodiment, portions are removed usingwell known milling techniques, such as for example using a FIB millingtool to perform a FIB induced or FIB assisted chemical etch (similar tothat described with respect to FIG. 4B). Milling/removal continues untilportions of the diffused modifiable circuit structure 540 are removedand an electrical open 330 is formed. The electrical open 330 shown inFIG. 5B can correspond with the discontinuity 330 shown in FIG. 3. Uponforming the electrical open 330, the signal path between transistors 526and 528 has been broken and the circuits have been isolated from eachother.

To the extent that the modifiable circuit structures disclosed hereinare formed adjacent other circuitry in the IC, it has been determinedthat the modifiable circuit structures should be confined to areas thatexclude the formation of other active area circuitry. These areas,termed keep out areas, can be used (1) to facilitate the design in ofmodifiable circuit structures that can be used to isolate IC circuitry,(2) to facilitate impeding signal transmissions at key designed inlayout points within an IC, and (3) to design in bonus features (andother designed in experiments) by providing predetermined layoutrequirements that will enable fast and easy line cutting with a FIBduring debug. FIGS. 6A and 6B illustrate relative dimensions for keepout areas for the embodiments discussed with respect to FIGS. 4A/4B and5A/5B respectively.

Turning now to FIG. 6A, a keep out area 600A for the modifiable circuitstructure 440 (FIGS. 4A/4B) is shown. As shown in FIG. 6A, for apolysilicon (or the like) modifiable circuit structure 440 (centered inthe keep out area 600A) having a width 440W and a length 440L, the widthdimension 604 of the keep out area 600A can be approximately nine timesthat of the width dimension 440W of the modifiable circuit structure440, and the length dimension 602 of keep out area 600A can beapproximately 1.5 times that of the length dimension 440L of themodifiable circuit structure 440.

Turning now to FIG. 6B, a keep out area 600B for the modifiable circuitstructure 540 (FIGS. 5A/5B) is shown. As shown in FIG. 6B, for adiffused modifiable circuit structure 540 (centered in the keep out area600B) having a width 540W and a length 540L, the width dimension 610 ofthe keep out area 600B can be approximately four times that of the widthdimension 440W of the modifiable circuit structure 440, and the lengthdimension 602 of keep out area 600B can be approximately 1.4 times thanthat of the length dimension 440L of the modifiable circuit structure440.

In the various embodiments discussed herein modifiable circuitstructures, their use in integrated circuits and methods for cuttingthem have been disclosed. Embodiments of the present invention canadvantageously be used to facilitate IC debugging processes and therebyexpedite mass production of optimized IC products. As disclosed herein,modifiable circuit structures (diffusion (tap or diode) regions or fieldpoly structures) of a given dimension can be disposed in keep out areasand placed in series with a given signal line or within a design cell(e.g. bonus cell inputs) in order to enable signal cutting through asilicon substrate backside with a FIB, or the like. In one embodiment,the modifiable circuit structure can be placed in series betweeninterconnecting circuits so as to provide the option of removingcircuits from the IC. In an alternative embodiment, the modifiablecircuit structure can be placed in series between the input pin of abonus device (e.g., a bonus NAND gate) and VCC or VSS to hold the inputpin's logic state high or low, thereby preventing the bonus device frombeing in a tri-state and impacting the operation of other interconnectedcircuitry while not being used by the IC. The modifiable circuitstructures disclosed herein can advantageously be used in clock cells,bonus cells, and in deterministic experiments to ensure accessibilityand FIB-ability of such cells through the silicon backside.

Embodiments of the present invention overcome the prior art problemsencountered when using M1 cut constructs as modifiable circuitstructures. That is, unlike prior art copper metal lines which do notvolatilize easily, the diffusion resistor and/or field poly modifiablecircuit structures disclosed herein can be fully volatilized during FIBmilling. Selectivity to the FIB milling process is thereby improved aswell as the FIB cut success rate and throughput. Moreover, modifiablecircuit structures disclosed can easily be designed in to existing masklayouts and the structures themselves can be fabricated on semiconductorsubstrates using existing processing technologies with minimal/no addedprocessing steps being required.

Having thus described in detail embodiments of the present invention, itis understood that the invention defined by the appended claims is notto be limited by particular details set forth in the above description,as many apparent variations thereof are possible without departing fromthe spirit or scope thereof.

1. A method for editing an integrated circuit comprising: forming awindow through bulk semiconductor regions of a semiconductor substrate,the window exposing a modifiable circuit structure, the modifiablecircuit structure connecting at least a first interconnect with at leasta second interconnect; and forming a discontinuity in the modifiablecircuit structure, wherein the modifiable circuit structure comprises aconductive material that is different from a material used to form theinterconnects in the integrated circuit.
 2. The method of claim 1,wherein the modifiable circuit structure is further characterized as apolysilicon-containing modifiable circuit structure.
 3. The method ofclaim 2, wherein the modifiable circuit structure is formed concurrentlywith the formation of gate electrodes used by the integrated circuit. 4.The method of claim 2, wherein the modifiable circuit structure overliesan isolation region of the integrated circuit.
 5. The method of claim 2,wherein the modifiable circuit structure overlies an active area of theintegrated circuit.
 6. The method of claim 1, wherein the modifiablecircuit structure comprises a material selected from the groupconsisting of epitaxial silicon, amorphous silicon, refractorysilicides, refractory metals, aluminum, conductive nitrides, conductiveoxides, and alloys thereof.
 7. The method of claim 1, wherein themodifiable circuit structure is electrically connected to integratedcircuit interconnects by way of vias, and wherein prior to forming thediscontinuity, a combination of the interconnects, the vias, and themodifiable circuit structure forms an uninterrupted medium fortransmitting signals between adjacent integrated circuit circuitry. 8.The method of claim 1, wherein the modifiable circuit structure isfurther characterized as a diffused region in portions of asemiconductor substrate.
 9. The method of claim 8, wherein the diffusedregion is one of a tap diffused region or diode diffused region.
 10. Themethod of claim 8, wherein the diffused region is silicided.
 11. Themethod of claim 1, wherein prior to forming a discontinuity in themodifiable circuit structure, semiconductor substrate portions of theintegrated circuit are first thinned.
 12. The method of claim 11,wherein the window exposing a modifiable circuit structure is formedusing a focused ion beam milling process.
 13. The method of claim 12,wherein the modifiable circuit structure is confined to within a keepout area associated with the integrated circuit.
 14. A method forediting an integrated circuit comprising: forming a window through bulksemiconductor regions of a semiconductor substrate, the window exposinga modifiable circuit structure; and forming a discontinuity in themodifiable circuit structure, wherein the modifiable circuit structurecomprises a conductive material that is different from a material usedto form interconnects in the integrated circuit, wherein the modifiablecircuit structure is formed concurrently with the formation of gateelectrodes used by the integrated circuit.
 15. The method of claim 14,wherein the modifiable circuit structure is further characterized as apolysilicon-containing modifiable circuit structure.
 16. The method ofclaim 15, wherein the modifiable circuit structure overlies an isolationregion of the integrated circuit.
 17. The method of claim 15, whereinthe modifiable circuit structure overlies an active area of theintegrated circuit.
 18. The method of claim 14, wherein the modifiablecircuit structure comprises a material selected from the groupconsisting of epitaxial silicon, amorphous silicon, refractorysilicides, refractory metals, aluminum, conductive nitrides, conductiveoxides, and alloys thereof.
 19. The method of claim 14, wherein themodifiable circuit structure is electrically connected to integratedcircuit interconnects by way of vias, and wherein prior to forming thediscontinuity, a combination of the interconnects, the vias, and themodifiable circuit structure forms an uninterrupted medium fortransmitting signals between adjacent integrated circuit circuitry. 20.The method of claim 14, wherein the modifiable circuit structure isfurther characterized as a diffused region in portions of asemiconductor substrate.
 21. The method of claim 20, wherein thediffused region is one of a tap diffused region or diode diffusedregion.
 22. The method of claim 20, wherein the diffused region issilicided.
 23. The method of claim 14, wherein prior to forming adiscontinuity in the modifiable circuit structure, semiconductorsubstrate portions of the integrated circuit are first thinned.
 24. Themethod of claim 23, wherein the window exposing a modifiable circuitstructure is formed using a focused ion beam milling process.
 25. Themethod of claim 24, wherein the modifiable circuit structure is confinedto within a keep out area associated with the integrated circuit.